Invention Grant
- Patent Title: Apparatus for chemical vapor deposition control
- Patent Title (中): 化学气相沉积控制装置
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Application No.: US12814278Application Date: 2010-06-11
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Publication No.: US08852347B2Publication Date: 2014-10-07
- Inventor: Eric M. Lee , Jacques Faguet , Eric J. Strang
- Applicant: Eric M. Lee , Jacques Faguet , Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/52 ; C23C16/44 ; H05B3/00 ; C23C16/455 ; C23F1/00

Abstract:
A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.
Public/Granted literature
- US20110303145A1 Apparatus for chemical vapor deposition control Public/Granted day:2011-12-15
Information query
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