Invention Grant
- Patent Title: Plasma etching apparatus and method
- Patent Title (中): 等离子体蚀刻装置及方法
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Application No.: US11867371Application Date: 2007-10-04
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Publication No.: US08852385B2Publication Date: 2014-10-07
- Inventor: Akira Koshiishi , Noriyuki Kobayashi , Shigeru Yoneda , Kenichi Hanawa , Shigeru Tahara , Masaru Sugimoto
- Applicant: Akira Koshiishi , Noriyuki Kobayashi , Shigeru Yoneda , Kenichi Hanawa , Shigeru Tahara , Masaru Sugimoto
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-275722 20061006; JP2007-164637 20070622; JP2007-254058 20070928
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; H01L21/768 ; H01L21/311 ; H01J37/32 ; H01L21/3065
Abstract:
An upper electrode and a lower electrode are disposed opposite to each other in a process container configured to be vacuum-exhausted. The upper electrode is connected to a first RF power supply configured to apply a first RF power for plasma generation. The lower electrode is connected to a second RF power supply configured to apply a second RF power for ion attraction. The second RF power supply is provided with a controller preset to control the second RF power supply to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power set to deposit polymers on a predetermined film on a wafer and a second power set to promote etching of the predetermined film on the wafer.
Public/Granted literature
- US20080110859A1 PLASMA ETCHING APPARATUS AND METHOD Public/Granted day:2008-05-15
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