Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US12883761Application Date: 2010-09-16
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Publication No.: US08852386B2Publication Date: 2014-10-07
- Inventor: Hachishiro Iizuka , Yuki Mochizuki , Jun Abe
- Applicant: Hachishiro Iizuka , Yuki Mochizuki , Jun Abe
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2009-215586 20090917
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32

Abstract:
A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.
Public/Granted literature
- US20110061813A1 PLASMA PROCESSING APPARATUS Public/Granted day:2011-03-17
Information query
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