Invention Grant
- Patent Title: Defect monitoring for resist layer
- Patent Title (中): 抗蚀剂层缺陷监测
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Application No.: US13286451Application Date: 2011-11-01
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Publication No.: US08852673B2Publication Date: 2014-10-07
- Inventor: Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
- Applicant: Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/40 ; G03F7/42

Abstract:
Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
Public/Granted literature
- US20130108775A1 DEFECT MONITORING FOR RESIST LAYER Public/Granted day:2013-05-02
Information query
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