Invention Grant
US08852677B2 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
有权
具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
- Patent Title: Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
- Patent Title (中): 具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
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Application No.: US13566132Application Date: 2012-08-03
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Publication No.: US08852677B2Publication Date: 2014-10-07
- Inventor: David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
- Applicant: David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: B32B15/04
- IPC: B32B15/04 ; B05D5/12 ; B05D5/00 ; B32B15/00
Abstract:
A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
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