Invention Grant
US08852686B2 Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
有权
使用Ge（II）源形成相变材料层的方法，以及相变存储器件的制造方法
- Patent Title: Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
- Patent Title (中): 使用Ge（II）源形成相变材料层的方法，以及相变存储器件的制造方法
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Application No.: US13429546Application Date: 2012-03-26
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Publication No.: US08852686B2Publication Date: 2014-10-07
- Inventor: Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
- Applicant: Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2007-0102585 20071011
- Main IPC: C23C16/30
- IPC: C23C16/30 ; H01L21/71 ; H01L45/00 ; H01L27/24 ; G11C13/00 ; C23C16/455
Abstract:
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
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