Invention Grant
US08852761B2 CoFeSiB/Pt multilayers exhibiting perpendicular magnetic anisotropy
有权
表现出垂直磁各向异性的CoFeSiB / Pt多层膜
- Patent Title: CoFeSiB/Pt multilayers exhibiting perpendicular magnetic anisotropy
- Patent Title (中): 表现出垂直磁各向异性的CoFeSiB / Pt多层膜
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Application No.: US13872253Application Date: 2013-04-29
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Publication No.: US08852761B2Publication Date: 2014-10-07
- Inventor: Young Keun Kim , You-Song Kim , Byong-Sun Chun , Seung-Youb Han , Jang-Roh Rhee
- Applicant: Korea University Foundation
- Applicant Address: KR Seoul
- Assignee: Korea University Foundation
- Current Assignee: Korea University Foundation
- Current Assignee Address: KR Seoul
- Agency: Alston & Bird LLP
- Priority: KR2006-118143 20061128
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11B5/39 ; G11B5/65 ; G11B5/66 ; H01F10/12 ; G01R33/09
Abstract:
Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
Public/Granted literature
- US20130244058A1 CoFeSiB/Pt Multilayers Exhibiting Perpendicular Magnetic Anisotropy Public/Granted day:2013-09-19
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