Invention Grant
US08852854B2 Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis
有权
使用氧化型催化在半导体晶片上形成光致抗蚀剂图案的方法
- Patent Title: Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis
- Patent Title (中): 使用氧化型催化在半导体晶片上形成光致抗蚀剂图案的方法
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Application No.: US11709721Application Date: 2007-02-21
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Publication No.: US08852854B2Publication Date: 2014-10-07
- Inventor: Thomas Wallow , Uzodinma Okoroanyanwu
- Applicant: Thomas Wallow , Uzodinma Okoroanyanwu
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Farjami & Farjami LLP
- Main IPC: G03F7/40
- IPC: G03F7/40 ; G03F7/32
Abstract:
According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.
Public/Granted literature
- US20080199813A1 Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis Public/Granted day:2008-08-21
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