Invention Grant
- Patent Title: Substrate treatment method
- Patent Title (中): 底物处理方法
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Application No.: US13399041Application Date: 2012-02-17
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Publication No.: US08852857B2Publication Date: 2014-10-07
- Inventor: Shinji Kobayashi
- Applicant: Shinji Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2011-046691 20110303
- Main IPC: G03F7/40
- IPC: G03F7/40 ; H01L21/67 ; H01L21/677

Abstract:
A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting and heating the substrate on a stage in a treatment container; then supplying a solvent gas to a center portion of a front surface of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask; and while performing the process of supplying and exhausting a solvent gas, forming a temperature gradient in the substrate via the stage such that a temperature at the center portion of the substrate is higher than a temperature at a peripheral portion of the substrate.
Public/Granted literature
- US20120225389A1 SUBSTRATE TREATMENT METHOD Public/Granted day:2012-09-06
Information query
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