Invention Grant
- Patent Title: Semiconductor light-emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光装置及其制造方法
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Application No.: US13707168Application Date: 2012-12-06
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Publication No.: US08852974B2Publication Date: 2014-10-07
- Inventor: Chien-Fu Huang , Yi-Ming Chen , Yi-Tang Lai , Chia-Liang Hsu , Tsung-Hsien Yang , Tzu-Chieh Hsu
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/22
Abstract:
A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.
Public/Granted literature
- US20140162386A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-06-12
Information query
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