Invention Grant
US08852979B2 Micro-pattern forming method, and micro-channel transistor and micro-channel light-emitting transistor forming method using same
有权
微图案形成方法，以及使用其的微通道晶体管和微通道发光晶体管形成方法
- Patent Title: Micro-pattern forming method, and micro-channel transistor and micro-channel light-emitting transistor forming method using same
- Patent Title (中): 微图案形成方法，以及使用其的微通道晶体管和微通道发光晶体管形成方法
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Application No.: US13877875Application Date: 2011-10-06
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Publication No.: US08852979B2Publication Date: 2014-10-07
- Inventor: Sung Yong Min , Tae Sik Kim , Tae-Woo Lee
- Applicant: Sung Yong Min , Tae Sik Kim , Tae-Woo Lee
- Applicant Address: KR
- Assignee: Postech Academy-Industry Foundation
- Current Assignee: Postech Academy-Industry Foundation
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2010-0097996 20101007; KR10-2011-0100763 20111004
- International Application: PCT/KR2011/007413 WO 20111006
- International Announcement: WO2012/047042 WO 20120412
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00 ; H01L51/00 ; H01L51/10 ; H01L51/42 ; H01L51/05
Abstract:
Provided is a method of forming a micropattern according to an aspect of the present invention. The method of forming a micropattern may include forming an organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate, forming a material layer on an entire surface of the substrate having the organic wire or organic-inorganic hybrid wire mask pattern formed thereon, and removing the organic wire or organic-inorganic hybrid wire mask pattern from the substrate to allow only the material layer on a portion of the substrate having no organic wire or organic-inorganic hybrid wire mask pattern formed thereon to be remained.
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