Invention Grant
- Patent Title: Laser-induced flaw formation in nitride semiconductors
- Patent Title (中): 氮化物半导体中激光诱导的缺陷形成
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Application No.: US14050638Application Date: 2013-10-10
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Publication No.: US08852980B2Publication Date: 2014-10-07
- Inventor: Clifford F. Knollenberg , William S. Wong , Christopher L. Chua
- Applicant: Palo Alto Research Center Incorporated
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L21/02 ; H01L21/268 ; H01L33/00 ; H01L29/66 ; H01L29/20
Abstract:
An embodiment is a method to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern.
Public/Granted literature
- US20140038334A1 LASER-INDUCED FLAW FORMATION IN NITRIDE SEMICONDUCTORS Public/Granted day:2014-02-06
Information query
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