Invention Grant
- Patent Title: Electrical contacts to nanostructured areas
- Patent Title (中): 与纳米结构区域的电接触
-
Application No.: US13622864Application Date: 2012-09-19
-
Publication No.: US08852981B2Publication Date: 2014-10-07
- Inventor: Marcie R. Black , Joanne Forziati , Michael Jura , Jeff Miller , Brian Murphy , Adam Standley
- Applicant: Bandgap Engineering, Inc.
- Applicant Address: US NH Salem
- Assignee: Bandgap Engineering, Inc.
- Current Assignee: Bandgap Engineering, Inc.
- Current Assignee Address: US NH Salem
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/283 ; H01L21/285 ; H01L29/06 ; H01L29/41 ; H01L31/0224 ; H01L31/0352
Abstract:
A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.
Public/Granted literature
- US20130099345A1 ELECTRICAL CONTACTS TO NANOSTRUCTURED AREAS Public/Granted day:2013-04-25
Information query
IPC分类:
