Invention Grant
- Patent Title: Technique for forming a MEMS device
- Patent Title (中): 用于形成MEMS器件的技术
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Application No.: US13075800Application Date: 2011-03-30
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Publication No.: US08852984B1Publication Date: 2014-10-07
- Inventor: Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
- Applicant: Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories
- Current Assignee: Silicon Laboratories
- Current Assignee Address: US TX Austin
- Agency: Abel Law Group, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
In at least one embodiment of the invention, a method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device includes forming a first structural layer above at least one semiconductor device formed on a substrate. The method includes forming a second structural layer above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. The MEMS device comprises at least one portion of at least one of the first and second structural layers. In at least one embodiment of the invention, the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.
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