Invention Grant
- Patent Title: Graphene pressure sensors
- Patent Title (中): 石墨烯压力传感器
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Application No.: US13600469Application Date: 2012-08-31
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Publication No.: US08852985B2Publication Date: 2014-10-07
- Inventor: Jin Cai , Yanqing Wu , Wenjuan Zhu
- Applicant: Jin Cai , Yanqing Wu , Wenjuan Zhu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/02
Abstract:
Semiconductor nano pressure sensor devices having graphene membrane suspended over open cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.
Public/Granted literature
- US20130273682A1 GRAPHENE PRESSURE SENSORS Public/Granted day:2013-10-17
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