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US08853005B2 Method for manufacturing semiconductor device 有权
制造半导体器件的方法

Method for manufacturing semiconductor device
Abstract:
When forming a conductive film by a method comprising sputtering after grinding the back surface of a semiconductor substrate, in order to avoid discharge from a part of an adhesive flown out at the outer periphery of the substrate, wherein the adhesive is used to fix the substrate to a support during grinding, at least the substrate end or the adhesive is removed after grinding the semiconductor substrate and before forming the conductive film, so that a gap between the substrate end and the adhesive may have a predetermined size.
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