Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13227518Application Date: 2011-09-08
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Publication No.: US08853005B2Publication Date: 2014-10-07
- Inventor: Seiya Fujii
- Applicant: Seiya Fujii
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-201023 20100908
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L21/44 ; H01L21/768 ; H01L23/48

Abstract:
When forming a conductive film by a method comprising sputtering after grinding the back surface of a semiconductor substrate, in order to avoid discharge from a part of an adhesive flown out at the outer periphery of the substrate, wherein the adhesive is used to fix the substrate to a support during grinding, at least the substrate end or the adhesive is removed after grinding the semiconductor substrate and before forming the conductive film, so that a gap between the substrate end and the adhesive may have a predetermined size.
Public/Granted literature
- US20120058605A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-03-08
Information query
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