Invention Grant
- Patent Title: Method of manufacturing semiconductor device and semiconductor device
- Patent Title (中): 制造半导体器件和半导体器件的方法
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Application No.: US13748255Application Date: 2013-01-23
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Publication No.: US08853006B2Publication Date: 2014-10-07
- Inventor: Syota Shimonishi , Hiroyuki Tajima , Yosuke Tsuchiya , Akira Sengoku
- Applicant: Toyoda Gosei Co., Ltd.
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-016268 20120130
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00
Abstract:
A method of manufacturing a semiconductor device comprises a mounting step of mounting a semiconductor element having an Au—Sn layer on a substrate, wherein the mounting step includes a paste supplying step of supplying an Ag paste having an Ag nanoparticle onto the substrate, a device mounting step of mounting a side of the Au—Sn layer of the semiconductor element on the Ag paste, and a bonding step of alloying the Au—Sn layer and the Ag paste to bond the semiconductor element to the substrate, wherein the Au—Sn layer has a content rate of Au of 50 at % to 85 at %.
Public/Granted literature
- US20130193580A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2013-08-01
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