Invention Grant
US08853013B2 Method for fabricating field effect transistor with fin structure
有权
具有翅片结构的场效应晶体管的制造方法
- Patent Title: Method for fabricating field effect transistor with fin structure
- Patent Title (中): 具有翅片结构的场效应晶体管的制造方法
-
Application No.: US13213092Application Date: 2011-08-19
-
Publication No.: US08853013B2Publication Date: 2014-10-07
- Inventor: Shih-Hung Tsai , Rai-Min Huang , Chien-Ting Lin
- Applicant: Shih-Hung Tsai , Rai-Min Huang , Chien-Ting Lin
- Applicant Address: unknown Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: unknown Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78
Abstract:
A method for fabricating a field effect transistor with fin structure includes the following sequences. First, a substrate is provided and at least a fin structure is formed on the substrate. Then, an etching process is performed to round at least an upper edge in the fin structure. Finally, a gate covering the fin structure is formed.
Public/Granted literature
- US20130045576A1 METHOD FOR FABRICATING FIELD EFFECT TRANSISTOR WITH FIN STRUCTURE Public/Granted day:2013-02-21
Information query
IPC分类:
