Invention Grant
- Patent Title: Method of fabricating a thin-film transistor
- Patent Title (中): 制造薄膜晶体管的方法
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Application No.: US13414842Application Date: 2012-03-08
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Publication No.: US08853014B2Publication Date: 2014-10-07
- Inventor: Toshio Fukuda , Yui Ishii
- Applicant: Toshio Fukuda , Yui Ishii
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2011-081404 20110401
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/76 ; H01L51/00 ; H01L51/05 ; H01L27/32 ; G02F1/1368 ; G02F1/167
Abstract:
There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C.
Public/Granted literature
- US20120248633A1 THIN-FILM DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS Public/Granted day:2012-10-04
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