Invention Grant
US08853016B2 Double gate thin-film transistor and OLED display apparatus including the same
有权
双栅极薄膜晶体管和包括其的OLED显示装置
- Patent Title: Double gate thin-film transistor and OLED display apparatus including the same
- Patent Title (中): 双栅极薄膜晶体管和包括其的OLED显示装置
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Application No.: US13758869Application Date: 2013-02-04
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Publication No.: US08853016B2Publication Date: 2014-10-07
- Inventor: Hye-Hyang Park , Ki-Ju Im , Yong-Sung Park
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Christie, Parker & Hale, LLP
- Priority: KR10-2010-0065461 20100707
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/40 ; H01L29/66 ; H01L51/00 ; H01L29/786 ; H01L27/32 ; H01L27/12
Abstract:
A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.
Public/Granted literature
- US20130157399A1 DOUBLE GATE THIN-FILM TRANSISTOR AND OLED DISPLAY APPARATUS INCLUDING THE SAME Public/Granted day:2013-06-20
Information query
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