Invention Grant
US08853030B2 Method for production of selective growth masks using underfill dispensing and sintering
有权
使用底部填充分配和烧结来生产选择性生长掩模的方法
- Patent Title: Method for production of selective growth masks using underfill dispensing and sintering
- Patent Title (中): 使用底部填充分配和烧结来生产选择性生长掩模的方法
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Application No.: US13867763Application Date: 2013-04-22
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Publication No.: US08853030B2Publication Date: 2014-10-07
- Inventor: Chong-Ming Lee , Andrew Eng-Jia Lee
- Applicant: Nanocrystal Asia Inc.
- Applicant Address: TW Taipei
- Assignee: Nanocrystal Asia Inc.
- Current Assignee: Nanocrystal Asia Inc.
- Current Assignee Address: TW Taipei
- Agency: Bacon & Thomas PLLC
- Agent Juan Carlos A. Marquez
- Main IPC: H01L21/336
- IPC: H01L21/336 ; G03F7/00 ; H01L21/027 ; C30B25/02 ; C30B29/40 ; H01L33/18
Abstract:
The present invention discloses a method for production of selective growth masks using underfill dispensing and sintering. The method includes steps of: providing a sapphire substrate, growing a gallium nitride base layer on the sapphire substrate, coating a photoresist layer, performing imprint lithography, exposure and development, performing underfill dispensing, and performing sintering. The production method of the present invention can be applied in the atmosphere, and vacuum chambers as known production approaches are unnecessary. The selective growth masks produced by the method of the present invention make the growth of nanowires cylindrical and perpendicular to the gallium nitride base layer, and each nanowire is parallel to one another.
Public/Granted literature
- US20130280894A1 METHOD FOR PRODUCTION OF SELECTIVE GROWTH MASKS USING UNDERFILL DISPENSING AND SINTERING Public/Granted day:2013-10-24
Information query
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