Invention Grant
- Patent Title: Doped graphene films with reduced sheet resistance
- Patent Title (中): 具有降低薄层电阻的掺杂石墨烯薄膜
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Application No.: US13616418Application Date: 2012-09-14
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Publication No.: US08853034B2Publication Date: 2014-10-07
- Inventor: Ali Afzali-Ardakani , Ageeth Anke Bol , George Stojan Tulevski
- Applicant: Ali Afzali-Ardakani , Ageeth Anke Bol , George Stojan Tulevski
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Vazken Alexanian; Michael J. Chang, LLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; C01B31/04 ; B82Y30/00 ; H01B1/04 ; H01L51/00 ; B82Y40/00 ; B82Y10/00 ; H01L51/44
Abstract:
Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
Public/Granted literature
- US20130011960A1 Doped Graphene Films with Reduced Sheet Resistance Public/Granted day:2013-01-10
Information query
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