Invention Grant
US08853043B2 Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
有权
硅锗（SiGe）异质结双极晶体管（HBT）
- Patent Title: Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
- Patent Title (中): 硅锗（SiGe）异质结双极晶体管（HBT）
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Application No.: US13610641Application Date: 2012-09-11
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Publication No.: US08853043B2Publication Date: 2014-10-07
- Inventor: Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
- Applicant: Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Law Office of Charles W. Peterson, Jr.
- Agent Anthony Canale
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222 ; H01L29/737 ; H01L29/10 ; H01L21/8249
Abstract:
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.
Public/Granted literature
- US20130005108A1 SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) Public/Granted day:2013-01-03
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