Invention Grant
- Patent Title: Low capacitance precision resistor
- Patent Title (中): 低电容精密电阻
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Application No.: US13282224Application Date: 2011-10-26
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Publication No.: US08853045B2Publication Date: 2014-10-07
- Inventor: Steven R. Soss
- Applicant: Steven R. Soss
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Dithavong & Steiner, P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/08 ; H01L29/8605 ; H01L49/02

Abstract:
A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each segment, and filling the space between the segments with an insulating material. The resulting structure maintains electrical connection between the segments at end pads, but separates the resistor segments from the bottom substrate, thereby avoiding capacitive coupling with the substrate.
Public/Granted literature
- US20120038026A1 LOW CAPACITANCE PRECISION RESISTOR Public/Granted day:2012-02-16
Information query
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