Invention Grant
US08853046B2 Using TiON as electrodes and switching layers in ReRAM devices
有权
在ReRAM器件中使用TiON作为电极和开关层
- Patent Title: Using TiON as electrodes and switching layers in ReRAM devices
- Patent Title (中): 在ReRAM器件中使用TiON作为电极和开关层
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Application No.: US13397968Application Date: 2012-02-16
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Publication No.: US08853046B2Publication Date: 2014-10-07
- Inventor: Nan Lu , Chien-Lan Hsueh
- Applicant: Nan Lu , Chien-Lan Hsueh
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A single TiON film is used to form a ReRAM device by varying the oxygen and nitrogen content throughout the device to form the electrodes and switching layer. A ReRAM device that can be formed in a single deposition chamber is also disclosed. The ReRAM device can be formed by forming a first titanium nitride layer, forming a titanium oxynitride-titanium oxide-titanium oxynitride layer, and then forming a second titanium nitride.
Public/Granted literature
- US20130214236A1 USING TiON AS ELECTRODES AND SWITCHING LAYERS IN ReRAM DEVICES Public/Granted day:2013-08-22
Information query
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