Invention Grant
- Patent Title: Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus
- Patent Title (中): 电容元件，其制造方法，固态成像装置和成像装置
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Application No.: US13964459Application Date: 2013-08-12
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Publication No.: US08853053B2Publication Date: 2014-10-07
- Inventor: Yoshiki Ebiko
- Applicant: Sony Corporation
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JPP2009-086669 20090331
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/94 ; H01L29/66 ; H04N5/3745 ; H04N5/378 ; H01L49/02 ; H01L27/146
Abstract:
A capacitive element, includes: an active region parted by an element isolation region formed in a semiconductor substrate; a first electrode formed of a diffusion layer in the active region; an insulating layer formed on the first electrode; and a second electrode formed on a planar surface of the first electrode via the insulating layer, wherein the second electrode is formed within the active region and within the first electrode in a planar layout.
Public/Granted literature
- US20130323901A1 CAPACITIVE ELEMENT, MANUFACTURING METHOD OF THE SAME, SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS Public/Granted day:2013-12-05
Information query
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