Invention Grant
- Patent Title: Method for manufacturing semiconductor device, epitaxial substrate for use therein and semi-finished semiconductor device
- Patent Title (中): 制造半导体器件的方法，其中使用的外延衬底和半成品半导体器件
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Application No.: US13846298Application Date: 2013-03-18
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Publication No.: US08853055B2Publication Date: 2014-10-07
- Inventor: Ray-Hua Horng , Ming-Chun Tseng , Fan-Lei Wu
- Applicant: National Chung-Hsing University
- Applicant Address: TW Taichung
- Assignee: National Chung-Hsing University
- Current Assignee: National Chung-Hsing University
- Current Assignee Address: TW Taichung
- Agency: Foley & Lardner LLP
- Priority: TW101118165A 20120522
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/762 ; H01L29/06 ; H01L21/78
Abstract:
A method for manufacturing a semiconductor device includes: (a) providing a base unit made of a material having a first lattice constant; (b) forming a first sacrificial layer made of a material having a second lattice constant on the base unit and a second sacrificial layer made of a material having a third lattice constant on the first sacrificial layer, the first lattice constant ranging between the second and third lattice constants so that two lattice stresses in opposite directions occur in the epitaxial substrate; (c) forming an epitaxial unit on the second sacrificial layer; (d) forming a permanent substrate on the epitaxial unit; and (e) removing the epitaxial unit.
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