Invention Grant
- Patent Title: Method of uniform selenization and sulfurization in a tube furnace
- Patent Title (中): 管式炉中均匀硒化和硫化的方法
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Application No.: US13461495Application Date: 2012-05-01
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Publication No.: US08853059B2Publication Date: 2014-10-07
- Inventor: Haifan Liang , Jeroen Van Duren , Sandeep Nijhawan
- Applicant: Haifan Liang , Jeroen Van Duren , Sandeep Nijhawan
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 350 C and about 450 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres. A partial selenization is performed at a temperature between about 350 C and about 450 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 450 C and about 550 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres, followed by an additional selenization step at a temperature between about 450 C and about 550 C in a Se-containing atmosphere. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas.
Public/Granted literature
- US20130295748A1 METHOD OF UNIFORM SELENIZATION AND SULFERIZATION IN A TUBE FURNACE Public/Granted day:2013-11-07
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