Invention Grant
- Patent Title: Epitaxial process
- Patent Title (中): 外延过程
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Application No.: US13902862Application Date: 2013-05-27
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Publication No.: US08853060B1Publication Date: 2014-10-07
- Inventor: Szu-Hao Lai , Chun-Yuan Wu , Chin-Cheng Chien , Tien-Wei Yu , Ming-Hua Chang , Yu-Shu Lin , Tsai-Yu Wen , Hsin-Kuo Hsu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02
Abstract:
An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.
Information query
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