Invention Grant
US08853063B2 Method and system for carbon doping control in gallium nitride based devices
有权
基于氮化镓的器件中碳掺杂控制的方法和系统
- Patent Title: Method and system for carbon doping control in gallium nitride based devices
- Patent Title (中): 基于氮化镓的器件中碳掺杂控制的方法和系统
-
Application No.: US14061741Application Date: 2013-10-23
-
Publication No.: US08853063B2Publication Date: 2014-10-07
- Inventor: David P. Bour , Thomas R. Prunty , Linda Romano , Richard J. Brown , Isik C. Kizilyalli , Hui Nie
- Applicant: Avogy, Inc.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L29/207 ; H01L29/66 ; H01L29/20
Abstract:
A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer.
Public/Granted literature
- US20140116328A1 METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES Public/Granted day:2014-05-01
Information query
IPC分类:
