Invention Grant
- Patent Title: Method of manufacturing substrate
- Patent Title (中): 制造基板的方法
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Application No.: US13656734Application Date: 2012-10-21
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Publication No.: US08853064B2Publication Date: 2014-10-07
- Inventor: Hae Yong Lee , Young Jun Choi , Jin Hun Kim , Hyun soo Jang , Hea Kon Oh , Hyun Hee Hwang
- Applicant: Lumigntech Co., Ltd.
- Applicant Address: KR
- Assignee: Lumigntech Co., Ltd.
- Current Assignee: Lumigntech Co., Ltd.
- Current Assignee Address: KR
- Priority: KR10-2011-0107973 20111021; KR10-2012-0046448 20120502
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/30 ; H01L21/46 ; C30B25/00 ; C30B25/10 ; H01L21/02 ; C30B29/40 ; C30B25/02 ; C30B25/18
Abstract:
The present invention is directed to a method of manufacturing a substrate, which includes loading a base substrate into a reaction furnace; forming a buffer layer on the base substrate; forming a separation layer on the buffer layer; forming a semiconductor layer on the separation layer at least two; and separating the semiconductor layer from the base substrate via the separation layer through natural cooling by unloading the base substrate from the reaction furnace.
Public/Granted literature
- US20130178049A1 METHOD OF MANUFACTURING SUBSTRATE Public/Granted day:2013-07-11
Information query
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