Invention Grant
- Patent Title: Field effect transistor and method of fabrication
- Patent Title (中): 场效应晶体管及其制造方法
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Application No.: US13607954Application Date: 2012-09-10
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Publication No.: US08853069B2Publication Date: 2014-10-07
- Inventor: Hoon Kim , Kisik Choi , Chanro Park
- Applicant: Hoon Kim , Kisik Choi , Chanro Park
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Keohane & D'Alessandro PLLC
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/28 ; H01L29/49 ; H01L29/78 ; H01L29/66 ; H01L29/51
Abstract:
An improved field effect transistor and method of fabrication are disclosed. A barrier layer stack is formed in the base and sidewalls of a gate cavity. The barrier layer stack has a first metal layer and a second metal layer. A gate electrode metal is deposited in the cavity. The barrier layer stack is thinned or removed on the sidewalls of the gate cavity, to more precisely control the voltage threshold of the field effect transistor.
Public/Granted literature
- US20140070283A1 FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION Public/Granted day:2014-03-13
Information query
IPC分类:
