Invention Grant
- Patent Title: Method for producing vias
- Patent Title (中): 生产通孔的方法
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Application No.: US13947467Application Date: 2013-07-22
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Publication No.: US08853073B2Publication Date: 2014-10-07
- Inventor: Pascal Chausse
- Applicant: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1257226 20120725
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
Method for producing at least one via (200) in the thickness of a substrate and an electrically conducting line (280) connected to the via (200) and formed on a face (220) of the substrate, comprising: forming, from the face (220), a via cavity comprising a side wall and a bottom; forming an isolating layer (240) on the side wall and the bottom of the cavity; forming at least one line pattern on the face (220) of the substrate, with the line pattern opening into the via cavity; filling with an electrically conducting material the line pattern and the via cavity, a filling so configured as not to totally fill said cavity; Forming at least one line pattern comprises, after forming the isolating layer (240), the forming of a trench (244) in a portion of the isolating layer (240) positioned on the face (220).
Public/Granted literature
- US20140051228A1 METHOD FOR PRODUCING VIAS Public/Granted day:2014-02-20
Information query
IPC分类:
