Method of manufacturing semiconductor device

Invention Grant

US08853074B2 Method of manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method of manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US13069754

Application Date: 2011-03-23
Publication No.: US08853074B2

Publication Date: 2014-10-07
Inventor: Tatsuya Miyazaki
Applicant: Tatsuya Miyazaki
Applicant Address: LU Luxembourgh
Assignee: PS4 Luxco S.a.r.l.
Current Assignee: PS4 Luxco S.a.r.l.
Current Assignee Address: LU Luxembourgh
Priority: JP2010-068179 20100324
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/768 ; C25D7/12

Method of manufacturing semiconductor device

Abstract:

A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first hole is formed in an insulating film. A seed layer, which covers an upper surface of the insulating film and an inner surface of the first hole, is formed. A first plating film is formed over the seed layer at a first growth rate. A second plating film is formed over the first plating film at a second growth rate that is higher than the first growth rate. A third plating film is formed over the second plating film at a third growth rate that is higher than the second growth rate.

Abstract(Chinese):

制造半导体器件的方法可以包括但不限于以下处理。在绝缘膜中形成第一孔。形成覆盖绝缘膜的上表面和第一孔的内表面的种子层。以第一生长速率在籽晶层上形成第一镀膜。以比第一生长速度高的第二生长速率在第一镀膜上形成第二镀膜。以比第二生长速度高的第三生长速率在第二镀膜上形成第三镀膜。

Public/Granted literature

US20110237069A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-09-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）