Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

Invention Grant

US08853075B2 Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process 有权

Title translation: 使用原子层沉积（ALD）工艺在衬底上形成含钛层的方法

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Patent Title: Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process
Patent Title (中): 使用原子层沉积（ALD）工艺在衬底上形成含钛层的方法
Application No.: US12920026

Application Date: 2009-02-13
Publication No.: US08853075B2

Publication Date: 2014-10-07
Inventor: Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
Applicant: Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
Applicant Address: FR Paris
Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
Current Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
Current Assignee Address: FR Paris
Agent Patricia E. McQueeney
Priority: EP08305035 20080227
International Application: PCT/EP2009/051683 WO 20090213
International Announcement: WO2009/106433 WO 20090903
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01J31/12 ; H01J29/86

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

Abstract:

Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

Abstract(Chinese):

公开了在基底上形成含钛层的方法。在所公开的方法中，提供了具有式Ti（Me 5 C p）（OR）3的前体化合物的蒸气，其中R选自甲基，乙基或异丙基。根据原子层沉积工艺使蒸气与基底反应，以在基底表面上形成含钛复合物。

Public/Granted literature

US20110275215A1 METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS Public/Granted day:2011-11-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）