Invention Grant
US08853078B2 Method of depositing material 有权
材料沉积方法

Method of depositing material
Abstract:
Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.
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