Invention Grant
- Patent Title: Manufacturing method of circuit structure
- Patent Title (中): 电路结构的制造方法
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Application No.: US13961844Application Date: 2013-08-07
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Publication No.: US08853102B2Publication Date: 2014-10-07
- Inventor: Ching-Sheng Chen
- Applicant: Ching-Sheng Chen
- Applicant Address: TW Hsinchu County
- Assignee: Subtron Technology Co., Ltd.
- Current Assignee: Subtron Technology Co., Ltd.
- Current Assignee Address: TW Hsinchu County
- Agency: Jianq Chyun IP Office
- Priority: TW100115619A 20110504
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H05K3/06 ; B82Y10/00 ; H01L21/768

Abstract:
A manufacturing method of a circuit structure is provided. A metal layer having an upper surface is provided. A surface passivation layer is formed on the metal layer. The surface passivation layer exposes a portion of the upper surface of the metal layer, and a material of the metal layer is different from a material of the surface passivation layer. The metal layer and the surface passivation layer are dipped into a modifier, and the modifier is selectively absorbed and attached to the surface passivation layer, so as to form a covering layer. The covering layer has a plurality of nanoparticles and covers the surface passivation layer.
Public/Granted literature
- US20130323927A1 MANUFACTURING METHOD OF CIRCUIT STRUCTURE Public/Granted day:2013-12-05
Information query
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