Invention Grant
- Patent Title: Silicon solar cell with back surface field
- Patent Title (中): 具有背面场的硅太阳能电池
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Application No.: US13253467Application Date: 2011-10-05
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Publication No.: US08853524B2Publication Date: 2014-10-07
- Inventor: Harold John Hovel
- Applicant: Harold John Hovel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph P. Abate; Howard M. Cohn
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L21/02 ; H01L21/225

Abstract:
A solar cell and method of fabrication are disclosed. In one embodiment of the present invention, the method comprises depositing a first doped amorphous silicon layer on a first surface of a silicon substrate, depositing a second doped amorphous silicon layer on the first surface of the silicon substrate. The second doped amorphous silicon layer is doped oppositely from the first doped amorphous silicon layer. An anneal is performed to transform the first doped amorphous silicon layer and second doped amorphous silicon layer to crystalline silicon layers.
Public/Granted literature
- US20130087195A1 SILICON SOLAR CELL WITH BACK SURFACE FIELD Public/Granted day:2013-04-11
Information query
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