Invention Grant
US08853559B2 Insulation circuit board, and power semiconductor device or inverter module using the same
有权
绝缘电路板和功率半导体器件或逆变器模块使用相同
- Patent Title: Insulation circuit board, and power semiconductor device or inverter module using the same
- Patent Title (中): 绝缘电路板和功率半导体器件或逆变器模块使用相同
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Application No.: US13388450Application Date: 2010-02-24
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Publication No.: US08853559B2Publication Date: 2014-10-07
- Inventor: Hironori Matsumoto , Jumpei Kusukawa
- Applicant: Hironori Matsumoto , Jumpei Kusukawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-225903 20090930
- International Application: PCT/JP2010/052847 WO 20100224
- International Announcement: WO2011/040054 WO 20110407
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H01L23/62 ; H01L25/18 ; H05K1/02 ; H01L23/64 ; H01L23/14 ; H01L25/07 ; H05K1/05 ; H05K1/03 ; H05K7/00 ; H05K1/18 ; H01L23/498

Abstract:
The invention relates to a high-voltage insulation circuit board which is used in an electric power apparatus such as an electric power converter or the like such as power semiconductor device, inverter module, or the like and provides an insulation circuit board in which electric field concentration at the end sections of a wiring pattern is reduced, partial discharging is suppressed, and a reliability is high. According to the invention, there is provided an insulation circuit board having: a metal base substrate; and wiring patterns which are formed onto at least one of the surfaces of the metal base substrate through an insulation layer, characterized in that between two adjacent wiring patterns in which an electric potential difference exists among the wiring patterns, at least one or more wiring patterns or conductors which are in contact with the insulation layer and have an electric potential in a range of the electric potential difference between the adjacent wiring patterns are arranged. According to the invention, the electric field concentration at the end sections of the wiring pattern to which a high voltage is applied is reduced and partial-discharge-resistant characteristics are improved.
Public/Granted literature
- US20120127684A1 INSULATION CIRCUIT BOARD, AND POWER SEMICONDUCTOR DEVICE OR INVERTER MODULE USING THE SAME Public/Granted day:2012-05-24
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