Invention Grant
- Patent Title: Semiconductor memory devices having lower and upper interconnections, selection components and memory components
- Patent Title (中): 半导体存储器件具有下部和上部互连,选择部件和存储器部件
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Application No.: US13668489Application Date: 2012-11-05
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Publication No.: US08853660B2Publication Date: 2014-10-07
- Inventor: JaeJong Han , Sungun Kwon , Jinhye Bae , Kongsoo Lee , Seong Hoon Jeong , Yoongoo Kang , Ho-Kyun An
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2011-0130376 20111207
- Main IPC: H01L29/02
- IPC: H01L29/02

Abstract:
Semiconductor devices include lower interconnections, upper interconnections crossing over the lower interconnections, selection components disposed at crossing points of the lower interconnections and the upper interconnections, respectively, and memory components disposed between the selection components and the upper interconnections. Each of the selection components may include a semiconductor pattern having a first sidewall and a second sidewall. The first sidewall of the semiconductor pattern may have a first upper width and a first lower width that is greater than the first upper width. The second sidewall of the semiconductor pattern may have a second upper width and a second lower width that is substantially equal to the second upper width.
Public/Granted literature
- US20130146830A1 Semiconductor Devices and Methods of Manufacturing the Same Public/Granted day:2013-06-13
Information query
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