Invention Grant
US08853665B2 Semiconductor constructions, memory cells, memory arrays and methods of forming memory cells
有权
半导体结构,存储器单元,存储器阵列和形成存储器单元的方法
- Patent Title: Semiconductor constructions, memory cells, memory arrays and methods of forming memory cells
- Patent Title (中): 半导体结构,存储器单元,存储器阵列和形成存储器单元的方法
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Application No.: US13551975Application Date: 2012-07-18
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Publication No.: US08853665B2Publication Date: 2014-10-07
- Inventor: Fabio Pellizzer , Cinzia Perrone
- Applicant: Fabio Pellizzer , Cinzia Perrone
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.
Public/Granted literature
- US20140021431A1 Semiconductor Constructions, Memory Cells, Memory Arrays and Methods of Forming Memory Cells Public/Granted day:2014-01-23
Information query
IPC分类: