A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm2 and 30 V-pits/μm2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.