Invention Grant
US08853669B2 Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
有权
通过衬底和外延层图案化限制III族氮化物异质结构中的应变松弛
- Patent Title: Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
- Patent Title (中): 通过衬底和外延层图案化限制III族氮化物异质结构中的应变松弛
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Application No.: US13281775Application Date: 2011-10-26
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Publication No.: US08853669B2Publication Date: 2014-10-07
- Inventor: James S. Speck , Anurag Tyagi , Steven P. Denbaars , Shuji Nakamura
- Applicant: James S. Speck , Anurag Tyagi , Steven P. Denbaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/16
- IPC: H01L33/16 ; H01L33/12 ; H01L29/04 ; H01L33/00 ; B82Y20/00 ; H01S5/343 ; H01S5/32 ; H01L29/778 ; H01L29/20
Abstract:
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
Public/Granted literature
- US20120097919A1 LIMITING STRAIN RELAXATION IN III-NITRIDE HETERO-STRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING Public/Granted day:2012-04-26
Information query
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