Invention Grant
US08853671B2 Nanorod light emitting device and method of manufacturing the same
有权
Nanorod发光器件及其制造方法
- Patent Title: Nanorod light emitting device and method of manufacturing the same
- Patent Title (中): Nanorod发光器件及其制造方法
-
Application No.: US13657357Application Date: 2012-10-22
-
Publication No.: US08853671B2Publication Date: 2014-10-07
- Inventor: Nam-Goo Cha , Geon-Wook Yoo , Han-Kyu Seong , Sam-Mook Kang , Hun-Jae Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2011-0108114 20111021
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/00 ; H01L33/38 ; H01L33/18 ; H01L33/08 ; H01L33/24 ; H01L33/44

Abstract:
A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.
Public/Granted literature
- US20130099199A1 NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-04-25
Information query
IPC分类: