Invention Grant
US08853685B2 Optical semiconductor, optical semiconductor electrode using same, photoelectrochemical cell, and energy system
有权
光半导体，使用其的光半导体电极，光电化学电池和能量系统
- Patent Title: Optical semiconductor, optical semiconductor electrode using same, photoelectrochemical cell, and energy system
- Patent Title (中): 光半导体，使用其的光半导体电极，光电化学电池和能量系统
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Application No.: US13575770Application Date: 2011-03-03
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Publication No.: US08853685B2Publication Date: 2014-10-07
- Inventor: Takaiki Nomura , Takahiro Suzuki , Nobuhiro Miyata , Kazuhito Hato
- Applicant: Takaiki Nomura , Takahiro Suzuki , Nobuhiro Miyata , Kazuhito Hato
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2010-047426 20100304
- International Application: PCT/JP2011/001240 WO 20110303
- International Announcement: WO2011/108271 WO 20110909
- Main IPC: H01L29/12
- IPC: H01L29/12 ; C01B21/082 ; C25B1/00 ; H01M8/06
Abstract:
The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2
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