Invention Grant
US08853686B2 Flat panel display device with oxide thin film transistor and method for fabricating the same
有权
具有氧化物薄膜晶体管的平板显示装置及其制造方法
- Patent Title: Flat panel display device with oxide thin film transistor and method for fabricating the same
- Patent Title (中): 具有氧化物薄膜晶体管的平板显示装置及其制造方法
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Application No.: US13587611Application Date: 2012-08-16
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Publication No.: US08853686B2Publication Date: 2014-10-07
- Inventor: Ji Eun Chae , Jung Eun Ahn , Tae Keun Lee
- Applicant: Ji Eun Chae , Jung Eun Ahn , Tae Keun Lee
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Gilson & Lione
- Priority: KR10-2011-0089280 20110902
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L27/12 ; H01L27/32

Abstract:
A flat panel display device with an oxide thin film transistor and a fabricating method thereof are disclosed. The fabricating method of the flat panel display device includes: preparing a substrate defined into a pixel region and a pad contact region; forming a gate electrode and a link line; forming a pixel electrode within the pixel region; forming an oxide layer on the substrate provided with the pixel electrode; forming a passivation layer on the substrate and performing a formation process of contact holes to expose the link line; and forming a second transparent conductive material film on the substrate.
Public/Granted literature
- US20130056726A1 FLAT PANEL DISPLAY DEVICE WITH OXIDE THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-03-07
Information query
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