Invention Grant
US08853701B2 Semiconductor device, display device, and production method for semiconductor device and display device
有权
半导体装置，显示装置以及半导体装置及显示装置的制造方法
- Patent Title: Semiconductor device, display device, and production method for semiconductor device and display device
- Patent Title (中): 半导体装置，显示装置以及半导体装置及显示装置的制造方法
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Application No.: US13643923Application Date: 2011-03-17
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Publication No.: US08853701B2Publication Date: 2014-10-07
- Inventor: Kazushige Hotta
- Applicant: Kazushige Hotta
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Chen Yoshimura LLP
- Priority: JP2010-104459 20100428
- International Application: PCT/JP2011/056421 WO 20110317
- International Announcement: WO2011/135945 WO 20111103
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L27/12 ; H01L27/092 ; H01L29/786
Abstract:
In order to efficiently manufacture a semiconductor device having a plurality of TFTs formed thereon, which can be applied to a variety of uses, a semiconductor device (100) is disclosed that is provided with a first P-type TFT (10a), a second P-type TFT (10b), a first N-type TFT (10c), and a second N-type TFT (10d), each having a channel region that is formed of polycrystalline silicon. When d1, d2, d3, and d4 respectively represent the concentrations of p-type impurities in the respective channel regions of the TFTs (10a to 10d), at least three values out of d1, d2, d3, and d4 are mutually different, and d1, d2, d3, and d4 satisfy relations of d1
Public/Granted literature
- US20130175535A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND DISPLAY DEVICE Public/Granted day:2013-07-11
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