Invention Grant
US08853709B2 III-nitride metal insulator semiconductor field effect transistor
有权
III族氮化物金属绝缘子半导体场效应晶体管
- Patent Title: III-nitride metal insulator semiconductor field effect transistor
- Patent Title (中): III族氮化物金属绝缘子半导体场效应晶体管
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Application No.: US13456039Application Date: 2012-04-25
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Publication No.: US08853709B2Publication Date: 2014-10-07
- Inventor: Rongming Chu , David F. Brown , Xu Chen , Adam J. Williams , Karim S. Boutros
- Applicant: Rongming Chu , David F. Brown , Xu Chen , Adam J. Williams , Karim S. Boutros
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20
Abstract:
A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.
Public/Granted literature
- US20130026495A1 III-Nitride Metal Insulator Semiconductor Field effect Transistor Public/Granted day:2013-01-31
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