Invention Grant
- Patent Title: Semiconductor light-emitting device and method for forming the same
- Patent Title (中): 半导体发光器件及其形成方法
-
Application No.: US13045202Application Date: 2011-03-10
-
Publication No.: US08853722B2Publication Date: 2014-10-07
- Inventor: Min-Hsun Hsieh , Chia-Fen Tsai
- Applicant: Min-Hsun Hsieh , Chia-Fen Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsin-Chu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW91114688A 20020715; TW93126439A 20040901
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L33/40 ; H01L33/46 ; H01L33/00 ; H01L33/42
Abstract:
A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.
Public/Granted literature
- US20110156078A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2011-06-30
Information query
IPC分类:
