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US08853731B2 Semiconductor light emitting device including bonding layer and semiconductor light emitting device package 有权
半导体发光器件包括接合层和半导体发光器件封装

Semiconductor light emitting device including bonding layer and semiconductor light emitting device package
Abstract:
A light emitting device including a bonding layer; a barrier layer on the bonding layer; an adhesion layer on the barrier layer, in which the adhesion layer includes Pd, Au, and Sn; a reflective layer on the adhesion layer, in which the reflective layer includes Ag; an ohmic contact layer on the reflective layer, in which the ohmic contact layer includes Pt and Ag; a light emitting structure layer on the ohmic contact layer; and a passivation layer includes an insulating material on a side surface and a top surface of the light emitting structure layer.
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